MOCVD工具推進(jìn)氧化鎵半導(dǎo)體研究
指南者留學(xué)
2022-07-21 15:25:39
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<div class="ace-line ace-line old-record-id-doxcnKCOkqseQw4U80o8XkCFwVd" style="text-align: center;"><span class="h6">博士生Cameron Gorsak將反應(yīng)器打開到金屬有機(jī)化學(xué)氣相沉積系統(tǒng),該系統(tǒng)用于制造氧化鎵薄膜。</span></div>
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<div class="ace-line ace-line old-record-id-doxcn4WciECYsouQ8yqmppQanIg" style="text-align: justify;"><span class="p">康奈爾大學(xué)的工程師和材料科學(xué)家在他們的實(shí)驗(yàn)室設(shè)備套件中增加了最先進(jìn)的工具,幫助該大學(xué)成為氧化鎵研究的世界領(lǐng)導(dǎo)者,氧化鎵通常被視為碳化硅和氮化鎵的繼承人,作為許多電力電子應(yīng)用的首選半導(dǎo)體。</span></div>
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<div class="ace-line ace-line old-record-id-doxcnO2ISagKWsUOe0AFvzz6jOc" style="text-align: justify;"><span class="p">Agnitron Agilis 100金屬有機(jī)化學(xué)氣相沉積(MOCVD)系統(tǒng)于6月30日在材料科學(xué)與工程助理研究教授Hari Nair的Duffield Hall實(shí)驗(yàn)室開始運(yùn)行。它經(jīng)過專門校準(zhǔn),可形成氧化鎵薄膜,氧化鎵是一種半導(dǎo)體材料,因其處理高電壓,功率密度和頻率的能力而備受贊譽(yù)。這些屬性使其成為電動(dòng)汽車,可再生能源和5G通信以及其他應(yīng)用的理想材料。</span></div>
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<div class="image-uploaded gallery old-record-id-doxcnCqeUoqeGQ8wieMqnb1Qbzh" data-type="image" data-ace-gallery-json="{"items":[{"uuid":"17b3f71e-459c-4086-90db-2209243f2511","height":446,"width":670,"currHeight":446,"currWidth":670,"natrualHeight":446,"natrualWidth":670,"pluginName":"imageUpload","scale":1,"src":"https%3A%2F%2Finternal-api-drive-stream.feishu.cn%2Fspace%2Fapi%2Fbox%2Fstream%2Fdownload%2Fall%2FboxcnbDzzXqjmTiPTG8UXsxg4cf%2F%3Fmount_node_token%3DdoxcnCqeUoqeGQ8wieMqnb1Qbzh%26mount_point%3Ddocx_image","file_token":"boxcnbDzzXqjmTiPTG8UXsxg4cf","image_type":"image/jpeg","size":79513,"comments":[]}]}"><span class="p"><img style="display: block; margin-left: auto; margin-right: auto;" src="https://info.compassedu.hk/sucai/content/1658474661070/1658474661070.png" width="670" height="446" /></span></div>
<div class="ace-line ace-line old-record-id-doxcn0os4a6ACcWwIiOc4f7Lomf" style="text-align: center;"><span class="h6">Hari Nair,材料科學(xué)與工程助理研究教授(左)和博士生Cameron Gorsak在金屬有機(jī)化學(xué)氣相沉積系統(tǒng)前。</span></div>
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<div class="ace-line ace-line old-record-id-doxcnY8WGiOaqgiK26LKRlzYqTd" style="text-align: justify;"><span class="p">“氧化鎵的另一個(gè)關(guān)鍵優(yōu)勢是能夠從其熔融形式中生長這種材料的單晶,”Nair說,“這將是擴(kuò)大基板尺寸的關(guān)鍵。這種擴(kuò)大規(guī)模的能力對于行業(yè)采用使用新型半導(dǎo)體材料制造的電子設(shè)備非常重要。</span></div>
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<div class="ace-line ace-line old-record-id-doxcns0QU6kyEyKoYM5L26sCtAb" style="text-align: justify;"><span class="p">氧化鎵MOCVD系統(tǒng)的工作原理是將金屬有機(jī)鎵前體噴涂在加熱的單晶半導(dǎo)體基板上。熱量使前體分解,釋放出鎵原子,然后與晶片表面的氧原子結(jié)合,從而產(chǎn)生高質(zhì)量的氧化鎵結(jié)晶層。</span></div>
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<div class="ace-line ace-line old-record-id-doxcnAiyq4SKASsYmKJwCN5ZWxm" style="text-align: justify;"><span class="p">MOCVD是生產(chǎn)化合物半導(dǎo)體外延薄膜的行業(yè)標(biāo)準(zhǔn),例如III族砷化物,III族磷化物和III族氮化物,它們在光學(xué)和移動(dòng)通信以及固態(tài)照明等應(yīng)用中起著重要作用。在過去的五年中,使用MOCVD生長的氧化鎵的質(zhì)量穩(wěn)步提高。</span></div>
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<div class="image-uploaded gallery old-record-id-doxcnSSKmYWycIS6OeAKCrIt2wg" data-type="image" data-ace-gallery-json="{"items":[{"uuid":"e8cd4d16-909e-4a5f-9bc9-bfb6bb26aa31","height":902,"width":670,"currHeight":902,"currWidth":670,"natrualHeight":902,"natrualWidth":670,"pluginName":"imageUpload","scale":1,"src":"https%3A%2F%2Finternal-api-drive-stream.feishu.cn%2Fspace%2Fapi%2Fbox%2Fstream%2Fdownload%2Fall%2Fboxcni13ZeyTbai2rjzJUgEF7xQ%2F%3Fmount_node_token%3DdoxcnSSKmYWycIS6OeAKCrIt2wg%26mount_point%3Ddocx_image","file_token":"boxcni13ZeyTbai2rjzJUgEF7xQ","image_type":"image/jpeg","size":145764,"comments":[]}]}"><span class="p"><img style="display: block; margin-left: auto; margin-right: auto;" src="https://info.compassedu.hk/sucai/content/1658474671035/1658474671035.png" width="670" height="902" /></span></div>
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<div class="ace-line ace-line old-record-id-doxcnIIqK4gkeO6yQi2rOzo7gCg" style="text-align: center;"><span class="h6">Agnitron Agilis 100 金屬有機(jī)化學(xué)氣相沉積系統(tǒng)的反應(yīng)器可將基板加熱至 1,500 攝氏度。</span></div>
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<div class="ace-line ace-line old-record-id-doxcnu8UmqcgoqouqmiBbvfGobg" style="text-align: justify;"><span class="p">“有了這個(gè)系統(tǒng),我們可以在廣泛可調(diào)的氧化化學(xué)勢下在直徑達(dá)2英寸的基板上生長薄膜,”Nair說。“它還具有非常高的基板溫度能力,我們可以將基板加熱到1,500攝氏度。高基板溫度產(chǎn)生更高質(zhì)量的薄膜,這是推動(dòng)電子設(shè)備性能的關(guān)鍵。</span></div>
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<div class="ace-line ace-line old-record-id-doxcn2uyYYM4M4coQqoRJdeAFdf" style="text-align: justify;"><span class="p">Nair計(jì)劃與AFRL-康奈爾大學(xué)外延解決方案中心和校園其他地方的研究人員合作,優(yōu)化氧化鎵的MOCVD,這將使該材料對尋求高精度,大批量生產(chǎn)的制造商更具經(jīng)濟(jì)吸引力。</span></div>
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<div class="ace-line ace-line old-record-id-doxcnQ8gyWQgGKaigeCmxEupDKc" style="text-align: justify;"><span class="p">“有必要使電力電子設(shè)備更緊湊,更高效,”Nair說。“其中一個(gè)夢想是拿一個(gè)變電站,大約是一個(gè)小房子的大小,然后把它縮小到一個(gè)手提箱的大小。這些創(chuàng)新將是創(chuàng)建智能電網(wǎng)的關(guān)鍵,而基于氧化鎵半導(dǎo)體的電力電子設(shè)備是實(shí)現(xiàn)這一目標(biāo)的墊腳石。</span></div>
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<div class="ace-line ace-line old-record-id-doxcnGuE0esaCeGOSuOvYDcPNie" style="text-align: justify;"><span class="p">康奈爾大學(xué)傳統(tǒng)上一直是化合物半導(dǎo)體研究的領(lǐng)導(dǎo)者。已故的電氣和計(jì)算機(jī)工程教授萊斯特·伊士曼(Lester Eastman)通過可追溯到20世紀(jì)60年代的研究,為基于化合物半導(dǎo)體的電子學(xué)和光子學(xué)做出了重大貢獻(xiàn)。當(dāng)今工業(yè)中使用的氮化鎵電子學(xué)基礎(chǔ)的材料科學(xué)和半導(dǎo)體物理學(xué)是康奈爾大學(xué)在他的監(jiān)督下開發(fā)的。近年來,康奈爾大學(xué)的教師種植了α-鋁鎵氧化物的單晶層,其能量帶隙是迄今為止所有半導(dǎo)體中最寬的。</span></div>
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<div class="ace-line ace-line old-record-id-doxcnIQwsY44qsgeGv0LGx0hkNZ" style="text-align: justify;"><span class="p">Nair希望MOCVD系統(tǒng)能夠?yàn)榭的螤柎髮W(xué)傳奇的材料科學(xué)史增添一抹亮色。</span></div>
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<div class="ace-line ace-line old-record-id-doxcnguSUwmwkoEGaiGoobFN7Ag" style="text-align: justify;"><span class="p">“氧化鎵提供的寬帶隙是巨大的,但如果你不能在大面積的基板上生長它,那么從實(shí)際的角度來看,這是一個(gè)阻礙,”Nair說。“氧化鎵必須提供一個(gè)很大的承諾,但我們還沒有做到。</span></div>
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